ON Semiconductor FGPF10N60UNDF IGBT

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): KR
Product Details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 20 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 42 W
Package Type TO-220F
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Length 10.36mm
Width 4.9mm
Height 16.07mm
Dimensions 10.36 x 4.9 x 16.07mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
1700 In stock for delivery within 3 working days
Price Each (In a Tube of 50)
HK$ 11.525
(exc. GST)
units
Per unit
Per Tube*
50 +
HK$11.525
HK$576.25
*price indicative
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