- RS Stock No.:
- 145-4381
- Mfr. Part No.:
- FGA50N100BNTDTU
- Manufacturer:
- ON Semiconductor
Discontinued product
- RS Stock No.:
- 145-4381
- Mfr. Part No.:
- FGA50N100BNTDTU
- Manufacturer:
- ON Semiconductor
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 50 A |
Maximum Collector Emitter Voltage | 1000 V |
Maximum Gate Emitter Voltage | ±25V |
Maximum Power Dissipation | 63 W |
Package Type | TO-3P |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.8 x 5 x 20.1mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |