onsemi FGAF40N60UFTU IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole
- RS Stock No.:
- 145-4338
- Mfr. Part No.:
- FGAF40N60UFTU
- Manufacturer:
- onsemi
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Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.
Added
Price Each (In a Tube of 30)
HK$19.988
| Units | Per unit | Per Tube* |
| 30 - 30 | HK$19.988 | HK$599.64 |
| 60 - 90 | HK$19.553 | HK$586.59 |
| 120 + | HK$19.119 | HK$573.57 |
| *price indicative | ||
- RS Stock No.:
- 145-4338
- Mfr. Part No.:
- FGAF40N60UFTU
- Manufacturer:
- onsemi
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Discrete IGBTs, Fairchild Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 40 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 100 W |
| Package Type | TO-3PF |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.5 x 5.5 x 26.5mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |