- RS Stock No.:
- 124-8809
- Mfr. Part No.:
- IKW30N60TFKSA1
- Manufacturer:
- Infineon
On back order for despatch 07/05/2024, delivery within 3 working days
Added
Price Each (In a Tube of 30)
HK$29.289
Units | Per unit | Per Tube* |
30 - 120 | HK$29.289 | HK$878.67 |
150 + | HK$26.36 | HK$790.80 |
*price indicative |
- RS Stock No.:
- 124-8809
- Mfr. Part No.:
- IKW30N60TFKSA1
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 600 to 650V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.