- RS Stock No.:
- 110-7176
- Mfr. Part No.:
- IKW75N65EL5XKSA1
- Manufacturer:
- Infineon
On back order for despatch 07/05/2024, delivery within 3 working days
Added
Price Each (In a Pack of 2)
HK$57.625
Units | Per unit | Per Pack* |
2 - 6 | HK$57.625 | HK$115.25 |
8 - 14 | HK$56.185 | HK$112.37 |
16 + | HK$55.315 | HK$110.63 |
*price indicative |
- RS Stock No.:
- 110-7176
- Mfr. Part No.:
- IKW75N65EL5XKSA1
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 600 to 650V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.