- RS Stock No.:
- 192-988
- Mfr. Part No.:
- IXGH40N120B2D1
- Manufacturer:
- IXYS
18 In stock for delivery within 3 working days
Added
Price Each
HK$164.98
Units | Per unit |
1 - 7 | HK$164.98 |
8 - 14 | HK$160.86 |
15 + | HK$158.39 |
- RS Stock No.:
- 192-988
- Mfr. Part No.:
- IXGH40N120B2D1
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 75 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 16.26 x 5.3 x 21.46mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |