Fuji Electric 7MBR35UA-120-50, M711 3 Phase Bridge IGBT Module, 35 A max, 1200 V, PCB Mount

  • RS Stock No. 716-5665
  • Mfr. Part No. 7MBR35UA-120-50
  • Manufacturer Fuji Electric
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

IGBT Discretes, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Configuration 3 Phase Bridge
Transistor Configuration 3 Phase
Maximum Continuous Collector Current 35 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type PCB Mount
Package Type M711
Pin Count 24
Maximum Power Dissipation 160 W
Dimensions 107.5 x 45 x 17mm
Height 17mm
Length 107.5mm
Maximum Operating Temperature +150 °C
Width 45mm
Discontinued product
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