- RS Stock No.:
- 168-4501
- Mfr. Part No.:
- MDI200-12A4
- Manufacturer:
- IXYS
Available for back order.
Added
Price Each (In a Box of 2)
HK$1,474.21
Units | Per unit | Per Box* |
2 - 2 | HK$1,474.21 | HK$2,948.42 |
4 - 6 | HK$1,442.165 | HK$2,884.33 |
8 + | HK$1,410.115 | HK$2,820.23 |
*price indicative |
- RS Stock No.:
- 168-4501
- Mfr. Part No.:
- MDI200-12A4
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Modules, IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 270 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Package Type | Y3 DCB |
Configuration | Single |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 7 |
Transistor Configuration | Single |
Dimensions | 110 x 62 x 30mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +150 °C |