Infineon FS150R12KE3BOSA1, AG-ECONO3-4 3 Phase Bridge IGBT Module, 200 A max, 1200 V, Panel Mount

  • RS Stock No. 166-1096
  • Mfr. Part No. FS150R12KE3BOSA1
  • Manufacturer Infineon
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Exempt
COO (Country of Origin): MY
Product Details

IGBT Modules, Infineon

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Configuration 3 Phase Bridge
Transistor Configuration 3 Phase
Maximum Continuous Collector Current 200 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Channel Type N
Mounting Type Panel Mount
Package Type AG-ECONO3-4
Maximum Power Dissipation 700 W
Dimensions 122 x 62 x 17mm
Height 17mm
Length 122mm
Maximum Operating Temperature +125 °C
Width 62mm
Minimum Operating Temperature -40 °C
20 In stock for delivery within 3 working days
Price Each (In a Tray of 10)
HK$ 2,470.439
(exc. GST)
units
Per unit
Per Tray*
10 +
HK$2,470.439
HK$24,704.39
*price indicative
Related Products
A Thyristor is a solid-state semiconductor device with ...
Description:
A Thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased. Thyristors are ...
A Thyristor is a solid-state semiconductor device with ...
Description:
A Thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased. Thyristors are ...
A Thyristor is a solid-state semiconductor device with ...
Description:
A Thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased. Thyristors are ...
A Thyristor is a solid-state semiconductor device with ...
Description:
A Thyristor is a solid-state semiconductor device with four layers of alternating N and P-type material. They act as bistable switches, conducting when their gate receives a current trigger, and continue to conduct while they are forward biased. Thyristors are ...