IXYS MIXA450PF1200TSF, SimBus F Dual IGBT Transistor Module, 650 A max, 1200 V, PCB Mount

  • RS Stock No. 146-1703
  • Mfr. Part No. MIXA450PF1200TSF
  • Manufacturer IXYS
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): DE
Product Details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Transistor Configuration Series
Configuration Dual
Maximum Continuous Collector Current 650 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±30V
Channel Type N
Mounting Type PCB Mount
Package Type SimBus F
Pin Count 11
Maximum Power Dissipation 2.1 kW
Dimensions 152 x 62 x 17mm
Height 17mm
Length 152mm
Maximum Operating Temperature +150 °C
Width 62mm
Minimum Operating Temperature -40 °C
6 In stock for delivery within 3 working days
Price Each (In a Box of 3)
HK$ 1,288.997
(exc. GST)
units
Per unit
Per Box*
3 +
HK$1,288.997
HK$3,866.991
*price indicative
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