Semikron SEMiX603GB12E4p, SEMiX®3p Series IGBT Transistor Module, 1.1 kA max, 1200 V, Through Hole

  • RS Stock No. 122-0393
  • Mfr. Part No. SEMiX603GB12E4p
  • Manufacturer Semikron
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

SEMiX® Dual IGBT Modules

Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387

• Low profile solder-free mounting package
• Trenchgate technology IGBTs
• VCE(sat) has positive temperature coefficient
• High short circuit current capability
• Press-fit pins as auxiliary contacts
• UL recognized

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Attribute Value
Configuration Series
Transistor Configuration Series
Maximum Continuous Collector Current 1.1 kA
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage 20V
Channel Type N
Mounting Type Through Hole
Package Type SEMiX®3p
Pin Count 11
Dimensions 150 x 62.4 x 17mm
Height 17mm
Length 150mm
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -40 °C
Width 62.4mm
11 In stock for delivery within 3 working days
Price Each
HK$ 2,299.95
(exc. GST)
Per unit
1 - 1
2 - 5
6 - 11
12 +