Infineon MOSFET Gate Driver 2, 290 mA 8-Pin 25 V, DSO
- RS Stock No.:
- 226-6021
- Mfr. Part No.:
- 2ED2109S06FXUMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 reel of 2500 units)*
HK$12,705.00
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 19 November 2027
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Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 10000 | HK$5.082 | HK$12,705.00 |
| 12500 + | HK$4.98 | HK$12,450.00 |
*price indicative
- RS Stock No.:
- 226-6021
- Mfr. Part No.:
- 2ED2109S06FXUMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | High Speed Power MOSFET & IGBT Driver | |
| Output Current | 290mA | |
| Pin Count | 8 | |
| Fall Time | 80ns | |
| Package Type | DSO | |
| Number of Outputs | 2 | |
| Driver Type | MOSFET | |
| Rise Time | 150ns | |
| Minimum Supply Voltage | 20V | |
| Maximum Supply Voltage | 25V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Height | 1.72mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Width | 3.9 mm | |
| Length | 4.9mm | |
| Series | 2ED2109 (4) S06F (J) | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type High Speed Power MOSFET & IGBT Driver | ||
Output Current 290mA | ||
Pin Count 8 | ||
Fall Time 80ns | ||
Package Type DSO | ||
Number of Outputs 2 | ||
Driver Type MOSFET | ||
Rise Time 150ns | ||
Minimum Supply Voltage 20V | ||
Maximum Supply Voltage 25V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Height 1.72mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Width 3.9 mm | ||
Length 4.9mm | ||
Series 2ED2109 (4) S06F (J) | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon 2ED2109S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
Floating channel designed for bootstrap operation
Operating voltages (VS node) upto + 650 V
Maximum bootstrap voltage (VB node) of + 675 V
Integrated ultra-fast, low resistance bootstrap diode
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