MPS MPQ1918GQE-AEC1-P, High and Low Side 1, 5 A, 5.5V 14-Pin, FCQFN-14
- RS Stock No.:
- 337-871P
- Mfr. Part No.:
- MPQ1918GQE-AEC1-P
- Manufacturer:
- MPS
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 337-871P
- Mfr. Part No.:
- MPQ1918GQE-AEC1-P
- Manufacturer:
- MPS
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | MPS | |
| Logic Type | TTL | |
| Output Current | 5 A | |
| Supply Voltage | 5.5V | |
| Pin Count | 14 | |
| Fall Time | 3ns | |
| Package Type | FCQFN-14 | |
| Driver Type | High and Low Side | |
| Number of Drivers | 1 | |
| Select all | ||
|---|---|---|
Brand MPS | ||
Logic Type TTL | ||
Output Current 5 A | ||
Supply Voltage 5.5V | ||
Pin Count 14 | ||
Fall Time 3ns | ||
Package Type FCQFN-14 | ||
Driver Type High and Low Side | ||
Number of Drivers 1 | ||
- COO (Country of Origin):
- CN
The MPS International Ltd 100V High Frequency Half Bridge GaN/MOSFET Driver is designed to drive enhancement mode Gallium Nitride FETs or N channel MOSFETs with a low gate threshold voltage in a half bridge or synchronous application. It also provides a bootstrap technique for the HS driver voltage, and can operate up to 100V. The new charging technology prevents the HS driver voltage from exceeding the VCC voltage, which prevents the gate voltage from exceeding the GaN FET’s maximum gate to source voltage rating.
Internal bootstrap switch supply voltage clamping
3.7V to 5.5V VCC voltage range
Fast propagation times
Excellent propagation delay matching