Cypress Semiconductor, FM25VN10-G

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): US
Product Details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Specifications
Attribute Value
Memory Size 1Mbit
Organisation 128k x 8 bit
Interface Type SPI
Data Bus Width 8bit
Mounting Type Surface Mount
Package Type SOIC
Pin Count 8
Dimensions 4.97 x 3.98 x 1.48mm
Length 4.97mm
Width 3.98mm
Maximum Operating Supply Voltage 3.6 V
Height 1.48mm
Maximum Operating Temperature +85 °C
Minimum Operating Supply Voltage 2 V
Number of Words 128k
Minimum Operating Temperature -40 °C
Number of Bits per Word 8bit
On back order for despatch 19/06/2020, delivery within 3 working days
Price Each (In a Tube of 97)
HK$ 95.24
(exc. GST)
units
Per unit
Per Tube*
97 - 97
HK$95.24
HK$9,238.28
194 - 194
HK$84.919
HK$8,237.143
291 - 485
HK$80.769
HK$7,834.593
582 +
HK$79.872
HK$7,747.584
*price indicative
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