- RS Stock No.:
- 188-5417
- Mfr. Part No.:
- FM25V01A-G
- Manufacturer:
- Infineon
1261 In stock for delivery within 3 working days
Added
Price Each (In a Tube of 97)
HK$40.049
Units | Per unit | Per Tube* |
97 - 97 | HK$40.049 | HK$3,884.753 |
194 - 291 | HK$39.048 | HK$3,787.656 |
388 + | HK$38.447 | HK$3,729.359 |
*price indicative |
- RS Stock No.:
- 188-5417
- Mfr. Part No.:
- FM25V01A-G
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- US
Product Details
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write-protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
2.5-mA active current at 40 MHz
150-μA standby current
8-μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write-protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
2.5-mA active current at 40 MHz
150-μA standby current
8-μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.