Infineon NOR 256 MB SPI FL-S Flash 16-Pin, S25FL256SAGMFM000
- RS Stock No.:
- 273-5393
- Mfr. Part No.:
- S25FL256SAGMFM000
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 tray of 240 units)*
HK$8,507.76
FREE delivery for orders over HK$250.00
Temporarily out of stock
- Shipping from 11 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 240 + | HK$35.449 | HK$8,507.76 |
*price indicative
- RS Stock No.:
- 273-5393
- Mfr. Part No.:
- S25FL256SAGMFM000
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 256MB | |
| Product Type | FL-S Flash | |
| Interface Type | SPI | |
| Pin Count | 16 | |
| Maximum Clock Frequency | 133MHz | |
| Cell Type | NOR | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Supply Voltage | 2.7V | |
| Timing Type | DDR | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Series | S25FL | |
| Supply Current | 100mA | |
| Automotive Standard | AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 256MB | ||
Product Type FL-S Flash | ||
Interface Type SPI | ||
Pin Count 16 | ||
Maximum Clock Frequency 133MHz | ||
Cell Type NOR | ||
Maximum Supply Voltage 3.6V | ||
Minimum Supply Voltage 2.7V | ||
Timing Type DDR | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Series S25FL | ||
Supply Current 100mA | ||
Automotive Standard AEC-Q100 | ||
The Infineon Flash Memory offers a high density coupled with the flexibility and fast performance required by a variety of embedded applications. It is Ideal for code shadowing, XIP and data storage. Executing code directly from flash memory is often called execute in Place. By using FL S devices at the higher clock rates supported, with QIO command, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically.
Advance sector protection
Minimum 20 year data retention
CMOS 3.0 V core with versatile IO
Hardware and software control options
Minimum 100000 program erase cycles
