This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.
-4 A, -20 V RDS(ON) = 0.065Ω @ VGS = -4.5 V RDS(ON) = 0.100Ω @ VGS = -2.5 V Fast switching speed Low gate charge (7.2nC typical) High performance trench technology for extremely low RDS(ON) SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8), low profile (1mm thick) Applications This product is general usage and suitable for many different applications.