onsemi 1 Darlington Transistor NPN, 2 A 100 V HFE:1000, 3-Pin DPAK
- RS Stock No.:
- 790-5319
- Mfr. Part No.:
- MJD112G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 15 units)*
HK$44.40
FREE delivery for orders over HK$250.00
In Stock
- 60 unit(s) ready to ship from another location
- Plus 225 unit(s) shipping from 22 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | HK$2.96 | HK$44.40 |
| 30 - 30 | HK$2.907 | HK$43.61 |
| 45 + | HK$2.847 | HK$42.71 |
*price indicative
- RS Stock No.:
- 790-5319
- Mfr. Part No.:
- MJD112G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Darlington Transistor | |
| Maximum Continuous Collector Current Ic | 2A | |
| Maximum Collector Emitter Voltage Vceo | 100V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Minimum DC Current Gain hFE | 1000 | |
| Maximum Collector Base Voltage VCBO | 100V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Maximum Power Dissipation Pd | 20W | |
| Transistor Polarity | NPN | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Series | MJD112 | |
| Height | 2.38mm | |
| Length | 6.73mm | |
| Maximum Collector Cut-off Current | 20μA | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Darlington Transistor | ||
Maximum Continuous Collector Current Ic 2A | ||
Maximum Collector Emitter Voltage Vceo 100V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Minimum DC Current Gain hFE 1000 | ||
Maximum Collector Base Voltage VCBO 100V | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Maximum Power Dissipation Pd 20W | ||
Transistor Polarity NPN | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Series MJD112 | ||
Height 2.38mm | ||
Length 6.73mm | ||
Maximum Collector Cut-off Current 20μA | ||
Automotive Standard AEC-Q101 | ||
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Related links
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