onsemi 1 Darlington Transistor NPN, 2 A 100 V HFE:1000, 3-Pin IPAK
- RS Stock No.:
- 790-5315
- Mfr. Part No.:
- MJD112-1G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 15 units)*
HK$111.30
FREE delivery for orders over HK$250.00
In Stock
- 45 unit(s) ready to ship from another location
- Plus 345 unit(s) shipping from 24 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 15 - 15 | HK$7.42 | HK$111.30 |
| 30 - 30 | HK$7.233 | HK$108.50 |
| 45 + | HK$7.12 | HK$106.80 |
*price indicative
- RS Stock No.:
- 790-5315
- Mfr. Part No.:
- MJD112-1G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Darlington Transistor | |
| Maximum Continuous Collector Current Ic | 2A | |
| Maximum Collector Emitter Voltage Vceo | 100V | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Minimum DC Current Gain hFE | 1000 | |
| Maximum Collector Base Voltage VCBO | 100V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Power Dissipation Pd | 20W | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.35mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Series | MJD112 | |
| Maximum Collector Cut-off Current | 20μA | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Darlington Transistor | ||
Maximum Continuous Collector Current Ic 2A | ||
Maximum Collector Emitter Voltage Vceo 100V | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Minimum DC Current Gain hFE 1000 | ||
Maximum Collector Base Voltage VCBO 100V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Power Dissipation Pd 20W | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Transistor Polarity NPN | ||
Maximum Operating Temperature 150°C | ||
Height 6.35mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Series MJD112 | ||
Maximum Collector Cut-off Current 20μA | ||
Automotive Standard AEC-Q101 | ||
The ON Semiconductor MJD112 is the complementary Darlington power transistors designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.
Straight lead version in plastic sleeves
These devices are Pb free and are RoHS compliant
Related links
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