onsemi TIP121G 1 Darlington Transistor NPN, 5 A 80 V dc HFE:1000, 3-Pin TO-220

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Subtotal (1 pack of 25 units)*

HK$142.40

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Units
Per unit
Per Pack*
25 - 100HK$5.696HK$142.40
125 +HK$5.628HK$140.70

*price indicative

Packaging Options:
RS Stock No.:
186-8205
Mfr. Part No.:
TIP121G
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Darlington Transistor

Maximum Continuous Collector Current Ic

5A

Maximum Collector Emitter Voltage Vceo

80V dc

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Number of Elements per Chip

1

Minimum DC Current Gain hFE

1000

Transistor Polarity

NPN

Maximum Emitter Base Voltage VEBO

5V dc

Minimum Operating Temperature

-65°C

Maximum Collector Base Voltage VCBO

80V dc

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Power Dissipation Pd

65W

Maximum Operating Temperature

150°C

Series

TIP121

Standards/Approvals

No

Length

10.53mm

Height

15.75mm

Maximum Collector Cut-off Current

0.5mA

Automotive Standard

No

COO (Country of Origin):
CN
The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. TIP120, TIP121, TIP122 (NPN), TIP125, TIP126, TIP127 (PNP) are complementary devices.

High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 Adc

Collector-Emitter Sustaining Voltage @ 100 mA

VCEO(sus) = 60 Vdc (Min) TIP120, TIP125

VCEO(sus) = 80 Vdc (Min) TIP121, TIP126

VCEO(sus) = 100 Vdc (Min) TIP122, TIP127

Low Collector-Emitter Saturation Voltage

VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc

Monolithic Construction with Built-In Base-Emitter Shunt Resistors

Compact TO-220 AB Package

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