onsemi 1 Darlington Transistor NPN, 5 A 80 V dc HFE:1000, 3-Pin TO-220

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 tube of 50 units)*

HK$276.50

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 27 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Tube*
50 - 50HK$5.53HK$276.50
100 - 150HK$5.364HK$268.20
200 +HK$5.204HK$260.20

*price indicative

RS Stock No.:
186-7440
Mfr. Part No.:
TIP121G
Manufacturer:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Product Type

Darlington Transistor

Maximum Continuous Collector Current Ic

5A

Maximum Collector Emitter Voltage Vceo

80V dc

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Number of Elements per Chip

1

Minimum DC Current Gain hFE

1000

Transistor Polarity

NPN

Maximum Emitter Base Voltage VEBO

5V dc

Maximum Power Dissipation Pd

65W

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-65°C

Maximum Collector Base Voltage VCBO

80V dc

Maximum Operating Temperature

150°C

Length

10.53mm

Series

TIP121

Height

15.75mm

Standards/Approvals

No

Maximum Collector Cut-off Current

0.5mA

Automotive Standard

No

COO (Country of Origin):
CN
The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. TIP120, TIP121, TIP122 (NPN), TIP125, TIP126, TIP127 (PNP) are complementary devices.

High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 Adc

Collector-Emitter Sustaining Voltage @ 100 mA

VCEO(sus) = 60 Vdc (Min) TIP120, TIP125

VCEO(sus) = 80 Vdc (Min) TIP121, TIP126

VCEO(sus) = 100 Vdc (Min) TIP122, TIP127

Low Collector-Emitter Saturation Voltage

VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc = 4.0 Vdc (Max) @ IC= 5.0 Adc

Monolithic Construction with Built-In Base-Emitter Shunt Resistors

Compact TO-220 AB Package

Related links