onsemi 1 Darlington Transistor NPN, 4 A 60 V dc HFE:1000, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

HK$319.30

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  • Shipping from 18 August 2026
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Units
Per unit
Per Tube*
50 - 50HK$6.386HK$319.30
100 - 150HK$6.194HK$309.70
200 +HK$6.008HK$300.40

*price indicative

RS Stock No.:
186-7344
Mfr. Part No.:
2N6387G
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Darlington Transistor

Maximum Continuous Collector Current Ic

4A

Maximum Collector Emitter Voltage Vceo

60V dc

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Number of Elements per Chip

1

Minimum DC Current Gain hFE

1000

Maximum Emitter Base Voltage VEBO

5V dc

Maximum Power Dissipation Pd

65W

Transistor Polarity

NPN

Minimum Operating Temperature

-65°C

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Collector Base Voltage VCBO

60V dc

Maximum Operating Temperature

150°C

Length

10.53mm

Series

2N6388

Standards/Approvals

No

Height

15.75mm

Maximum Collector Cut-off Current

1mA

Automotive Standard

No

COO (Country of Origin):
CN
The Power 8A 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

High DC Current Gain - hFE=2500 (Typ) @Ic=4.0 Adc

Collector-Emitter Sustaining Voltage - @ 100 mAdc, Vceo(sus) = 60 Vdc (Min) - 2N6387, Vceo (sus) = 80 Vdc (Min) - 2N6388

Collector-Emitter Sustaining Voltage - @ 100 mAdc , Vceo(sus) = 60 Vdc (Min) - 2N6387, Vceo (sus) = 80 Vdc (Min) - 2N6388

Low Collector-Emitter Saturation Voltage- Vce(sat) = 2.0 Vdc (Max) @ Ic=5.0 Adc

Monolithic Construction with Built-In Base-Emitter Shunt Resistors

T0-220AB Compact Package

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