onsemi MJD112G 1 Darlington Transistor NPN, 2 A 100 V HFE:1000, 3-Pin DPAK

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Subtotal (1 tube of 75 units)*

HK$212.325

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Units
Per unit
Per Tube*
75 - 75HK$2.831HK$212.33
150 - 225HK$2.747HK$206.03
300 +HK$2.664HK$199.80

*price indicative

RS Stock No.:
121-6413
Mfr. Part No.:
MJD112G
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Darlington Transistor

Maximum Continuous Collector Current Ic

2A

Maximum Collector Emitter Voltage Vceo

100V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Number of Elements per Chip

1

Minimum DC Current Gain hFE

1000

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Power Dissipation Pd

20W

Transistor Polarity

NPN

Maximum Emitter Base Voltage VEBO

5V

Minimum Operating Temperature

-65°C

Maximum Collector Base Voltage VCBO

100V

Maximum Operating Temperature

150°C

Length

6.73mm

Standards/Approvals

No

Width

6.22 mm

Height

2.38mm

Series

MJD112

Maximum Collector Cut-off Current

20μA

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY

NPN Darlington Transistors, ON Semiconductor


Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

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