onsemi AFGB40T65SQDN IGBT, 80 A 650 V, 3-Pin D2PAK, Surface Mount

RS Stock No.:: 185-8642
Mfr. Part No.:: AFGB40T65SQDN
Manufacturer:: onsemi

onsemi AFGB40T65SQDN IGBT, 80 A 650 V, 3-Pin D2PAK, Surface Mount

This product is currently unavailable to backorder.

Unfortunately, we don’t have this product in stock and it’s not available to backorder at this time.

Added

Price Each (In a Pack of 2)

HK$39.505

Units	Per unit	Per Pack*
2 - 198	HK$39.505	HK$79.01
200 - 398	HK$38.52	HK$77.04
400 +	HK$37.925	HK$75.85
*price indicative

RS Stock No.:: 185-8642
Mfr. Part No.:: AFGB40T65SQDN
Manufacturer:: onsemi

Product overview and Technical data sheets

Datasheet AFGB40T65SQDN

Legislation and Compliance

Non Compliant

COO (Country of Origin):: CN

Product Details

Using the novel field stop 4th generation IGBT technology. AFGB40T65SQDN offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications.

VCE(sat) = 1.6 V (typ.) @ IC = 40 A
Low VF soft recovery co-packaged diode
For automotive
Low conduction loss
Low noise and conduction loss
Applications
Automotive On Board Charge
Automotive DC/DC converter for HEV
End Products
EV/PHEV

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Maximum Continuous Collector Current	80 A
Maximum Collector Emitter Voltage	650 V
Maximum Gate Emitter Voltage	±20V
Number of Transistors	1
Maximum Power Dissipation	238 W
Package Type	D2PAK
Mounting Type	Surface Mount
Channel Type	N
Pin Count	3
Transistor Configuration	Single
Dimensions	10.67 x 9.65 x 4.58mm
Energy Rating	22.3mJ
Minimum Operating Temperature	-55 °C
Maximum Operating Temperature	+175 °C
Gate Capacitance	2495pF
Automotive Standard	AEC-Q101