- RS Stock No.:
- 168-6463
- Mfr. Part No.:
- STGE200NB60S
- Manufacturer:
- STMicroelectronics
On back order for despatch 29/05/2024, delivery within 3 working days
Added
Price Each (In a Tube of 10)
HK$234.785
Units | Per unit | Per Tube* |
10 - 10 | HK$234.785 | HK$2,347.85 |
20 - 90 | HK$230.089 | HK$2,300.89 |
100 + | HK$225.487 | HK$2,254.87 |
*price indicative |
- RS Stock No.:
- 168-6463
- Mfr. Part No.:
- STGE200NB60S
- Manufacturer:
- STMicroelectronics
Product overview and Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 200 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Package Type | ISOTOP |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 4 |
Transistor Configuration | Single |
Dimensions | 38.2 x 25.5 x 9.1mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |