onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA

RS Stock No.:: 163-0033
Mfr. Part No.:: MJ11012G
Manufacturer:: onsemi

onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA

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Price Each (In a Tray of 100)

HK$44.983

2 In stock for delivery within 3 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tray**
100 - 100	HK$44.983	HK$4,498.30
200 - 300	HK$44.005	HK$4,400.50
400 +	HK$43.027	HK$4,302.70

**price indicative

RS Stock No.:: 163-0033
Mfr. Part No.:: MJ11012G
Manufacturer:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	30 A
Maximum Collector Emitter Voltage	60 V
Maximum Emitter Base Voltage	5 V
Package Type	TO-204AA
Mounting Type	Through Hole
Pin Count	2
Transistor Configuration	Single
Number of Elements per Chip	2
Minimum DC Current Gain	200
Maximum Base Emitter Saturation Voltage	5 V
Maximum Collector Base Voltage	60 V
Maximum Collector Emitter Saturation Voltage	4 V
Maximum Operating Temperature	+200 °C
Dimensions	21.08 (Dia.) x 8.51mm
Minimum Operating Temperature	-55 °C
Height	8.51mm
Maximum Power Dissipation	200 W

onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA

NPN Darlington Transistors, ON Semiconductor

Standards