BAS21J,115 Switching Diode

  • RS Stock No. 146-0384
  • Mfr. Part No. BAS21J,115
  • Manufacturer Nexperia
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

Small Signal Switching Diodes, Nexperia

Features

Supports customised high density circuit designs
Low-leakage and high-voltage types available
High switching speeds
Low capacitance

Specifications
Attribute Value
Maximum Forward Current 250mA
Diode Configuration Single
Mounting Type Surface Mount
Number of Elements per Chip 1
Maximum Reverse Voltage 300V
Package Type SC-90
Diode Technology Silicon Junction
Pin Count 2
Maximum Forward Voltage Drop 1.1V
Maximum Diode Capacitance 2pF
Minimum Operating Temperature -65 °C
Maximum Operating Temperature +150 °C
Length 1.8mm
Width 1.35mm
Height 0.8mm
Dimensions 1.8 x 1.35 x 0.8mm
30000 In stock for delivery within 3 working days
Price Each (On a Reel of 3000)
HK$ 0.503
(exc. GST)
units
Per unit
Per Reel*
3000 +
HK$0.503
HK$1,509.00
*price indicative
Related Products
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
Insulated Gate Bipolar Transistors (IGBT) for motor drive ...
Description:
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.