Analog Devices HMC349AMS8GE, RF Switch Circuit 4GHz 42dB Isolation 8-Pin Mini-SO

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): TW
Product Details

Automotive telematics
Telecom infrastructure
Military and space
Portable wireless
Test and measurement equipment

The HMC349AMS8G is a gallium arsenide (GaAs), pseudo-morphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz. The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of 34 dBm. The HMC349AMS8G operates with a single positive supply voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible control interface. The HMC349AMS8G comes in an 8-lead mini small outline package with an exposed pad.

Nonreflective, 50 Ω design
High isolation: 57 dB to 2 GHz
Low insertion loss: 0.9 dB to 2 GHz
High input linearity
1 dB power compression (P1dB): 34 dBm typical
Third-order intercept (IP3): 52 dBm typical
High power handling
33.5 dBm through path
26.5 dBm terminated path
Single positive supply: 3 V to 5 V
CMOS-/TTL-compatible control
All off state control
8-lead mini small outline package with exposed pad (MINI_SO_EP)
Cellular/4G infrastructure
Wireless infrastructure
Mobile radios
Test equipment

Attribute Value
Maximum Insertion Loss 2.1dB
Minimum Isolation 42dB
Switching Speed 60ns
Number of Switches 1
Mounting Type Surface Mount
Package Type Mini-SO
Pin Count 8
Dimensions 3.1 x 3.1 x 0.94mm
Length 3.1mm
Width 3.1mm
Height 0.94mm
Maximum Frequency 4GHz
Maximum Operating Supply Voltage 5 V
Minimum Operating Supply Voltage 3 V
Maximum Operating Temperature +125 °C
Minimum Frequency 100MHz
Minimum Operating Temperature -40 °C
340 In stock for delivery within 3 working days
Price Each (In a Pack of 2)
HK$ 54.315
(exc. GST)
Per unit
Per Pack*
2 - 8
10 - 18
20 +
*price indicative
Packaging Options: