- RS Stock No.:
- 222-4790P
- Mfr. Part No.:
- BGSX22G5A10E6327XTSA1
- Manufacturer:
- Infineon
4185 In stock for delivery within 3 working days
Added
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
HK$5.747
Units | Per unit |
30 - 75 | HK$5.747 |
90 - 225 | HK$5.644 |
240 - 465 | HK$5.542 |
480 + | HK$5.442 |
- RS Stock No.:
- 222-4790P
- Mfr. Part No.:
- BGSX22G5A10E6327XTSA1
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
Product Details
The Infineon BGSX22G5A10 RF MOS switch is specifically designed for LTE and WCDMA multi antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.65V to 3.4V.
RF CMOS DPDT antenna cross switch with power handling capability of up to 37 dBm
Ultra-low insertion loss and harmonics generation
0.1 to 6.0 GHz coverage
High port-to-port-isolation
No decoupling capacitors required if no DC applied on RF lines
General Purpose Input-Output (GPIO) Interface
Small form factor 1.1mm x 1.5mm
No power supply blocking required
Ultra-low insertion loss and harmonics generation
0.1 to 6.0 GHz coverage
High port-to-port-isolation
No decoupling capacitors required if no DC applied on RF lines
General Purpose Input-Output (GPIO) Interface
Small form factor 1.1mm x 1.5mm
No power supply blocking required
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.