NCP51820AMNTWG Power Switch ICs

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

The NCP51820 high-speed gate driver is designed to meet the stringent requirements of driving enhancement mode (e−mode) and gate injection transistor (GIT) GaN HEMT power switches in offline, half-bridge power topologies. The NCP51820 offers short and matched propagation delays as well as −3.5 V to +650 V (typical) common mode voltage range for the high−side drive. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The NCP51820 offers important protection functions such as independent under−voltage lockout (UVLO) and IC thermal shutdown.

Specifications
Attribute Value
Power Switch Type High Side, Low Side
Number of Channels 2
Maximum Operating Supply Voltage 17 V
Maximum Operating Current 2.5mA
Mounting Type Surface Mount
Package Type QFN
Pin Count 15
Maximum Operating Temperature +150 °C
Dimensions 4.05 x 4.05 x 0.85mm
3960 In stock for delivery within 3 working days
Price Each (In a Pack of 10)
HK$ 14.083
(exc. GST)
units
Per unit
Per Pack*
10 - 90
HK$14.083
HK$140.83
100 - 490
HK$12.801
HK$128.01
500 - 990
HK$11.737
HK$117.37
1000 - 1990
HK$10.834
HK$108.34
2000 +
HK$10.056
HK$100.56
*price indicative
Packaging Options:
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