QRD1114 onsemi, IR Phototransistor, Through Hole 4-Pin Custom 4L package

RS Stock No.:: 184-1082
Mfr. Part No.:: QRD1114
Manufacturer:: onsemi

QRD1114 onsemi, IR Phototransistor, Through Hole 4-Pin Custom 4L package

On back order for despatch 05/06/2024, delivery within 3 working days

Added

Price Each (In a Bag of 100)

HK$7.992

Units	Per unit	Per Bag*
100 - 100	HK$7.992	HK$799.20
200 - 300	HK$7.793	HK$779.30
400 +	HK$7.673	HK$767.30
*price indicative

RS Stock No.:: 184-1082
Mfr. Part No.:: QRD1114
Manufacturer:: onsemi

Product overview and Technical data sheets

Datasheet QRD1114

Legislation and Compliance

Product Details

The QRD1113/14 reflective sensor consists of an infrared emitting diode and an NPN silicon photo darlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113/14. The photo darlington responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector.

Phototransistor output
No contact surface sensing
Unfocused for sensing diffused surfaces
Compact package
Daylight filter on sensor
Applications:
Medical Electronics/Devices
Automation
Test and Measurement
Building & Home Control

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Spectrums Detected	Infrared
Typical Fall Time	50µs
Typical Rise Time	10µs
Number of Channels	1
Maximum Dark Current	100nA
Number of Pins	4
Mounting Type	Through Hole
Package Type	Custom 4L
Dimensions	4.39 x 6.1 x 4.65mm
Collector Current	1 (Minimum)mA
Maximum Wavelength Detected	940nm
Spectral Range of Sensitivity	940 nm
Length	4.39mm
Width	6.1mm
Output Signal Type	Phototransistor
Height	4.65mm
Saturation Voltage	0.4V
Emitter Collector Voltage	5V
Collector Emitter Voltage	30V