QRD1113 ON Semiconductor, IR Phototransistor, Through Hole 4-Pin

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): TH
Product Details

The QRD1113/14 reflective sensor consists of an infrared emitting diode and an NPN silicon photo darlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113/14. The photo darlington responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector.

Phototransistor output
No contact surface sensing
Unfocused for sensing diffused surfaces
Compact package
Daylight filter on sensor
Medical Electronics/Devices
Test and Measurement
Building & Home Control

Attribute Value
Spectrums Detected Infrared
Typical Fall Time 50µs
Typical Rise Time 10µs
Number of Channels 1
Maximum Dark Current 100nA
Number of Pins 4
Mounting Type Through Hole
Package Type Custom 4L
Dimensions 4.39 x 6.1 x 4.65mm
Collector Current 0.3 (Minimum)mA
Emitter Collector Voltage 5V
Length 4.39mm
Collector Emitter Voltage 30V
Width 6.1mm
Output Signal Type Phototransistor
Spectral Range of Sensitivity 940 nm
Saturation Voltage 0.4V
Height 4.65mm
Maximum Wavelength Detected 940nm
400 In stock for delivery within 3 working days
Price Each (In a Bag of 100)
HK$ 8.416
(exc. GST)
Per unit
Per Bag*
100 - 400
500 - 900
1000 +
*price indicative