N-Channel MOSFET, 66 A, 500 V, 4-Pin SOT-227 IXYS IXFN80N50P
- RS Stock No.:
- 920-0745
- Mfr. Part No.:
- IXFN80N50P
- Manufacturer:
- IXYS
50 In stock for delivery within 3 working days
Added
Price Each (In a Tube of 10)
HK$243.001
| Units | Per unit | Per Tube* |
| 10 - 40 | HK$243.001 | HK$2,430.01 |
| 50 + | HK$218.701 | HK$2,187.01 |
| *price indicative | ||
- RS Stock No.:
- 920-0745
- Mfr. Part No.:
- IXFN80N50P
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 66 A |
| Maximum Drain Source Voltage | 500 V |
| Series | HiperFET, Polar |
| Package Type | SOT-227B |
| Mounting Type | Screw Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 65 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 700 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 25.07mm |
| Length | 38.2mm |
| Typical Gate Charge @ Vgs | 195 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Height | 9.6mm |