N-Channel MOSFET, 18 A, 55 V, 3-Pin TO-220AB Infineon IRLZ24NPBF

RS Stock No.:: 919-4895
Mfr. Part No.:: IRLZ24NPBF
Manufacturer:: Infineon

N-Channel MOSFET, 18 A, 55 V, 3-Pin TO-220AB Infineon IRLZ24NPBF

100 In stock for delivery within 3 working days

Added

Price Each (In a Tube of 50)

HK$5.48

Units	Per unit	Per Tube*
50 - 50	HK$5.48	HK$274.00
100 - 450	HK$5.396	HK$269.80
500 +	HK$4.441	HK$222.05
*price indicative

RS Stock No.:: 919-4895
Mfr. Part No.:: IRLZ24NPBF
Manufacturer:: Infineon

Product overview and Technical data sheets

Legislation and Compliance

COO (Country of Origin):: MX

Product Details

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	55 V
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	60 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	45 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	15 nC @ 5 V
Transistor Material	Si
Height	8.77mm
Minimum Operating Temperature	-55 °C
Series	HEXFET