N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-247AC Infineon IRFP064NPBF

RS Stock No.:: 919-4808
Mfr. Part No.:: IRFP064NPBF
Manufacturer:: Infineon

N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-247AC Infineon IRFP064NPBF

350 In stock for delivery within 3 working days

Added

Price Each (In a Tube of 25)

HK$16.169

Units	Per unit	Per Tube*
25 - 25	HK$16.169	HK$404.225
50 - 75	HK$15.817	HK$395.425
100 +	HK$15.466	HK$386.65
*price indicative

RS Stock No.:: 919-4808
Mfr. Part No.:: IRFP064NPBF
Manufacturer:: Infineon

Product overview and Technical data sheets

Legislation and Compliance

COO (Country of Origin):: MX

Product Details

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	110 A
Maximum Drain Source Voltage	55 V
Package Type	TO-247AC
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	200 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	170 nC @ 10 V
Width	5.3mm
Maximum Operating Temperature	+175 °C
Length	15.9mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Series	HEXFET
Height	20.3mm