2N7000-D26Z N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 ON Semiconductor

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 200 mA
Maximum Drain Source Voltage 60 V
Maximum Drain Source Resistance 9 Ω
Minimum Gate Threshold Voltage 0.8V
Maximum Gate Source Voltage -40 V, +40 V
Package Type TO-92
Mounting Type Through Hole
Transistor Configuration Single
Pin Count 3
Channel Mode Enhancement
Maximum Power Dissipation 400 mW
Width 4.19mm
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Length 5.2mm
Height 5.33mm
Transistor Material Si
Maximum Operating Temperature +150 °C
1500 In stock for delivery within 3 working days
Price Each (In a Pack of 100)
HK$ 0.974
(exc. GST)
units
Per unit
Per Pack*
100 - 400
HK$0.974
HK$97.40
500 - 900
HK$0.835
HK$83.50
1000 - 1900
HK$0.64
HK$64.00
2000 - 3900
HK$0.634
HK$63.40
4000 +
HK$0.628
HK$62.80
*price indicative
Packaging Options:
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