N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220SIS Toshiba TK10A80E,S4X(S
- RS Stock No.:
- 896-2647
- Mfr. Part No.:
- TK10A80E,S4X(S
- Manufacturer:
- Toshiba
40 In Global stock for delivery within 3 working day(s)
10 In Global stock for delivery within 3 working day(s)
Added
Price Each (In a Pack of 5)
HK$10.824
| Units | Per unit | Per Pack* |
| 5 - 20 | HK$10.824 | HK$54.12 |
| 25 - 120 | HK$10.498 | HK$52.49 |
| 125 - 245 | HK$10.174 | HK$50.87 |
| 250 - 495 | HK$9.956 | HK$49.78 |
| 500 + | HK$9.738 | HK$48.69 |
| *price indicative | ||
- RS Stock No.:
- 896-2647
- Mfr. Part No.:
- TK10A80E,S4X(S
- Manufacturer:
- Toshiba
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
MOSFET Transistors, Toshiba
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 10 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 50 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 46 nC @ 10 V |
| Length | 10mm |
| Maximum Operating Temperature | +150 °C |
| Width | 4.5mm |
| Height | 15mm |
| Series | TK |