N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD IXYS MMIX1T550N055T2
- RS Stock No.:
- 875-2500
- Mfr. Part No.:
- MMIX1T550N055T2
- Manufacturer:
- IXYS
On back order for despatch 08/11/2024, delivery within 3 working days
Added
Price Each
HK$379.53
| Units | Per unit |
| 1 - 4 | HK$379.53 |
| 5 - 9 | HK$370.04 |
| 10 + | HK$364.35 |
- RS Stock No.:
- 875-2500
- Mfr. Part No.:
- MMIX1T550N055T2
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 550 A |
| Maximum Drain Source Voltage | 55 V |
| Package Type | SMPD |
| Series | GigaMOS, HiperFET |
| Mounting Type | Surface Mount |
| Pin Count | 24 |
| Maximum Drain Source Resistance | 1.3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.8V |
| Maximum Power Dissipation | 830 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 595 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Width | 23.25mm |
| Length | 25.25mm |
| Minimum Operating Temperature | -55 °C |
| Height | 5.7mm |
| Forward Diode Voltage | 1.2V |