- RS Stock No.:
- 875-2500
- Mfr. Part No.:
- MMIX1T550N055T2
- Manufacturer:
- IXYS
On back order for despatch 08/11/2024, delivery within 3 working days
Added
Price Each
HK$379.53
Units | Per unit |
1 - 4 | HK$379.53 |
5 - 9 | HK$370.04 |
10 + | HK$364.35 |
- RS Stock No.:
- 875-2500
- Mfr. Part No.:
- MMIX1T550N055T2
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 550 A |
Maximum Drain Source Voltage | 55 V |
Package Type | SMPD |
Series | GigaMOS, HiperFET |
Mounting Type | Surface Mount |
Pin Count | 24 |
Maximum Drain Source Resistance | 1.3 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.8V |
Maximum Power Dissipation | 830 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Typical Gate Charge @ Vgs | 595 nC @ 10 V |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +175 °C |
Transistor Material | Si |
Width | 23.25mm |
Length | 25.25mm |
Minimum Operating Temperature | -55 °C |
Height | 5.7mm |
Forward Diode Voltage | 1.2V |