N-Channel MOSFET, 500 A, 75 V, 24-Pin SMPD IXYS MMIX1F520N075T2
- RS Stock No.:
- 875-2471
- Mfr. Part No.:
- MMIX1F520N075T2
- Manufacturer:
- IXYS
On back order for despatch 11/11/2024, delivery within 3 working days
Added
Price Each
HK$179.01
| Units | Per unit |
| 1 - 4 | HK$179.01 |
| 5 - 9 | HK$174.54 |
| 10 + | HK$171.85 |
- RS Stock No.:
- 875-2471
- Mfr. Part No.:
- MMIX1F520N075T2
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 500 A |
| Maximum Drain Source Voltage | 75 V |
| Package Type | SMPD |
| Series | GigaMOS, HiperFET |
| Mounting Type | Surface Mount |
| Pin Count | 24 |
| Maximum Drain Source Resistance | 1.6 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 830 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Length | 25.25mm |
| Typical Gate Charge @ Vgs | 545 nC @ 10 V |
| Width | 23.25mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 5.7mm |
| Forward Diode Voltage | 1.25V |