- RS Stock No.:
- 827-5237
- Mfr. Part No.:
- IPB042N10N3GATMA1
- Manufacturer:
- Infineon
Discontinued product
- RS Stock No.:
- 827-5237
- Mfr. Part No.:
- IPB042N10N3GATMA1
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Exempt
Product Details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 100 A |
Maximum Drain Source Voltage | 100 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 7.4 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 214 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Length | 10.31mm |
Typical Gate Charge @ Vgs | 88 nC @ 10 V |
Width | 9.45mm |
Maximum Operating Temperature | +175 °C |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Series | OptiMOS 3 |
Minimum Operating Temperature | -55 °C |
Height | 4.57mm |