P-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK Infineon IPB120P04P4L03ATMA1
- RS Stock No.:
- 826-9092
- Mfr. Part No.:
- IPB120P04P4L03ATMA1
- Manufacturer:
- Infineon
930 In stock for delivery within 3 working days
Added
Price Each (In a Pack of 10)
HK$24.596
| Units | Per unit | Per Pack* |
| 10 - 240 | HK$24.596 | HK$245.96 |
| 250 - 490 | HK$23.981 | HK$239.81 |
| 500 + | HK$23.613 | HK$236.13 |
| *price indicative | ||
- RS Stock No.:
- 826-9092
- Mfr. Part No.:
- IPB120P04P4L03ATMA1
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
RoHS Status: Exempt
Product Details
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 120 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | D2PAK (TO-263) |
| Series | OptiMOS P |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 5.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 136 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Number of Elements per Chip | 1 |
| Length | 10mm |
| Maximum Operating Temperature | +175 °C |
| Width | 9.25mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 180 nC @ 10 V |
| Height | 4.4mm |
| Minimum Operating Temperature | -55 °C |