- RS Stock No.:
- 802-4451P
- Mfr. Part No.:
- IXFQ28N60P3
- Manufacturer:
- IXYS
On back order for despatch 24/12/2024, delivery within 3 working days
Added
Price Each (Supplied in a Tube)
HK$53.835
Units | Per unit |
8 - 14 | HK$53.835 |
16 + | HK$53.00 |
- RS Stock No.:
- 802-4451P
- Mfr. Part No.:
- IXFQ28N60P3
- Manufacturer:
- IXYS
Product overview and Technical data sheets
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 28 A |
Maximum Drain Source Voltage | 600 V |
Series | HiperFET, Polar3 |
Package Type | TO-3P |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 260 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Maximum Power Dissipation | 695 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Operating Temperature | +150 °C |
Typical Gate Charge @ Vgs | 50 nC @ 10 V |
Transistor Material | Si |
Length | 15.8mm |
Width | 4.9mm |
Number of Elements per Chip | 1 |
Minimum Operating Temperature | -55 °C |
Height | 20.3mm |