TK16E60W,S1VX(S N-Channel MOSFET, 15.8 A, 600 V DTMOSIV, 3-Pin TO-220 Toshiba

  • RS Stock No. 799-5040
  • Mfr. Part No. TK16E60W,S1VX(S
  • Manufacturer Toshiba
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): CN
Product Details

MOSFET Transistors, Toshiba

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 15.8 A
Maximum Drain Source Voltage 600 V
Package Type TO-220
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 190 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3.7V
Maximum Power Dissipation 130 W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Number of Elements per Chip 1
Transistor Material Si
Typical Gate Charge @ Vgs 38 nC @ 10 V
Series DTMOSIV
Maximum Operating Temperature +150 °C
Height 15.1mm
Width 4.45mm
Length 10.16mm
45 In stock for delivery within 3 working days
Price Each (In a Pack of 5)
HK$ 12.39
(exc. GST)
units
Per unit
Per Pack*
5 - 20
HK$12.39
HK$61.95
25 - 120
HK$9.30
HK$46.50
125 - 245
HK$7.426
HK$37.13
250 - 495
HK$6.66
HK$33.30
500 +
HK$6.376
HK$31.88
*price indicative
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