Dual N/P-Channel-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN onsemi NTLJD3119CTBG

RS Stock No.:: 780-0655
Mfr. Part No.:: NTLJD3119CTBG
Manufacturer:: onsemi

Dual N/P-Channel-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN onsemi NTLJD3119CTBG

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On back order for despatch 16/08/2024, delivery within 3 working days

Added

Price Each (In a Pack of 10)

HK$5.092

Units	Per unit	Per Pack*
10 - 740	HK$5.092	HK$50.92
750 - 1490	HK$4.965	HK$49.65
1500 +	HK$4.887	HK$48.87
*price indicative

RS Stock No.:: 780-0655
Mfr. Part No.:: NTLJD3119CTBG
Manufacturer:: onsemi

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Dual N/P-Channel MOSFET, ON Semiconductor

The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semiconductor

Specifications

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.1 A, 4.6 A
Maximum Drain Source Voltage	20 V
Package Type	WDFN
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	120 mΩ, 200 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.3 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Length	2mm
Width	2mm
Transistor Material	Si
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	3.7 nC @ 4.5 V, 5.5 nC @ 4.5 V
Minimum Operating Temperature	-55 °C
Height	0.75mm