FMW20N60S1HF N-Channel MOSFET, 20 A, 600 V Super J-MOS, 3-Pin TO-247 Fuji Electric

  • RS Stock No. 772-9004
  • Mfr. Part No. FMW20N60S1HF
  • Manufacturer Fuji Electric
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-Channel Power MOSFET, Super J MOS, Fuji Electric

N-Channel enhancement mode power MOSFETs

- Low on-resistance
- Low noise
- Low switching loss

MOSFET Transistors, Fuji Electric

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 20 A
Maximum Drain Source Voltage 600 V
Package Type TO-247
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 190 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3.5V
Maximum Power Dissipation 140 W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Number of Elements per Chip 1
Typical Gate Charge @ Vgs 48 nC @ 10 V
Height 20.95mm
Series Super J-MOS
Maximum Operating Temperature +150 °C
Length 15.9mm
Width 5.03mm
Transistor Material Si
31 In stock for delivery within 3 working days
Price Each
HK$ 58.61
(exc. GST)
units
Per unit
1 - 4
HK$58.61
5 - 14
HK$57.41
15 - 29
HK$56.30
30 - 59
HK$50.19
60 +
HK$49.16
Packaging Options: