STP9NK90Z N-Channel MOSFET, 8 A, 900 V MDmesh, SuperMESH, 3-Pin TO-220 STMicroelectronics

Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 8 A
Maximum Drain Source Voltage 900 V
Package Type TO-220
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 1.3 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4.5V
Minimum Gate Threshold Voltage 3V
Maximum Power Dissipation 160 W
Transistor Configuration Single
Maximum Gate Source Voltage -30 V, +30 V
Number of Elements per Chip 1
Series MDmesh, SuperMESH
Typical Gate Charge @ Vgs 72 nC @ 10 V
Height 15.75mm
Minimum Operating Temperature -55 °C
Width 4.6mm
Maximum Operating Temperature +150 °C
Transistor Material Si
Length 10.4mm
4 In stock for delivery within 3 working days
Price Each
HK$ 27.06
(exc. GST)
units
Per unit
1 - 9
HK$27.06
10 - 19
HK$26.79
20 +
HK$26.51
Packaging Options:
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