3SK294(TE85L,F) N-Channel MOSFET, 30 mA, 12.5 V Depletion, 4-Pin USQ Toshiba

  • RS Stock No. 756-0382P
  • Mfr. Part No. 3SK294(TE85L,F)
  • Manufacturer Toshiba
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

RF MOSFET Transistors, Toshiba

MOSFET Transistors, Toshiba

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 30 mA
Maximum Drain Source Voltage 12.5 V
Package Type USQ
Mounting Type Surface Mount
Pin Count 4
Channel Mode Depletion
Maximum Gate Threshold Voltage 1.5V
Maximum Power Dissipation 100 mW
Transistor Configuration Single
Maximum Gate Source Voltage -8 V, +8 V
Number of Elements per Chip 1
Height 0.95mm
Transistor Material Si
Typical Power Gain 26 dB
Length 1.25mm
Width 2mm
Maximum Operating Temperature +125 °C
230 In stock for delivery within 3 working days
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
HK$ 2.58
(exc. GST)
units
Per unit
50 - 90
HK$2.58
100 - 240
HK$2.395
250 - 490
HK$2.235
500 +
HK$2.099
Packaging Options:
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