Dual P-Channel MOSFET, 4 A, 20 V, 8-Pin SOIC Vishay SI9933CDY-T1-GE3
- RS Stock No.:
- 710-3395
- Mfr. Part No.:
- SI9933CDY-T1-GE3
- Manufacturer:
- Vishay
On back order for despatch 20/09/2024, delivery within 3 working days
Added
Price Each (In a Pack of 5)
HK$4.608
| Units | Per unit | Per Pack* |
| 5 - 620 | HK$4.608 | HK$23.04 |
| 625 - 1245 | HK$4.492 | HK$22.46 |
| 1250 + | HK$4.422 | HK$22.11 |
| *price indicative | ||
- RS Stock No.:
- 710-3395
- Mfr. Part No.:
- SI9933CDY-T1-GE3
- Manufacturer:
- Vishay
Product overview and Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Dual P-Channel MOSFET, Vishay Semiconductor
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 4 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 58 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Width | 4mm |
| Length | 5mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 17 nC @ 10 V, 8 nC @ 4.5 V |
| Transistor Material | Si |
| Number of Elements per Chip | 2 |
| Minimum Operating Temperature | -50 °C |
| Height | 1.55mm |