N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-220AB Infineon IRFB4227PBF
- RS Stock No.:
- 650-4277
- Mfr. Part No.:
- IRFB4227PBF
- Manufacturer:
- Infineon
On back order for despatch 20/05/2024, delivery within 3 working days
Added
Price Each
HK$24.28
| Units | Per unit |
| 1 - 12 | HK$24.28 |
| 13 - 24 | HK$23.86 |
| 25 + | HK$23.43 |
- RS Stock No.:
- 650-4277
- Mfr. Part No.:
- IRFB4227PBF
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 65 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | TO-220AB |
| Series | HEXFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 24 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 330 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Width | 4.82mm |
| Length | 10.66mm |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V |
| Transistor Material | Si |
| Height | 9.02mm |
| Minimum Operating Temperature | -40 °C |