IRFB4227PBF N-Channel MOSFET, 65 A, 200 V HEXFET, 3-Pin TO-220AB Infineon

  • RS Stock No. 650-4277
  • Mfr. Part No. IRFB4227PBF
  • Manufacturer Infineon
Product overview and Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

Motor Control MOSFET

Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET

A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 65 A
Maximum Drain Source Voltage 200 V
Maximum Drain Source Resistance 24 mΩ
Maximum Gate Threshold Voltage 5V
Minimum Gate Threshold Voltage 3V
Maximum Gate Source Voltage -30 V, +30 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Transistor Configuration Single
Channel Mode Enhancement
Maximum Power Dissipation 330 W
Height 9.02mm
Minimum Operating Temperature -40 °C
Typical Gate Charge @ Vgs 70 nC @ 10 V
Number of Elements per Chip 1
Transistor Material Si
Maximum Operating Temperature +175 °C
Width 4.82mm
Length 10.66mm
Series HEXFET
129 In stock for delivery within 3 working days
Price Each
HK$ 24.38
(exc. GST)
units
Per unit
1 - 4
HK$24.38
5 - 9
HK$23.88
10 - 19
HK$23.41
20 - 39
HK$22.95
40 +
HK$21.58
Packaging Options:
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