N-Channel MOSFET, 9.3 A, 200 V, 3-Pin TO-220AB Infineon IRF630NPBF
- RS Stock No.:
- 543-0068
- Mfr. Part No.:
- IRF630NPBF
- Manufacturer:
- Infineon
78 In stock for delivery within 3 working days
Added
Price Each
HK$8.51
| Units | Per unit |
| 1 - 12 | HK$8.51 |
| 13 - 24 | HK$8.36 |
| 25 + | HK$8.20 |
- RS Stock No.:
- 543-0068
- Mfr. Part No.:
- IRF630NPBF
- Manufacturer:
- Infineon
Product overview and Technical data sheets
Legislation and Compliance
Product Details
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 9.3 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | TO-220AB |
| Series | HEXFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 300 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 82 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Width | 4.69mm |
| Length | 10.54mm |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 35 nC @ 10 V |
| Height | 8.77mm |
| Minimum Operating Temperature | -55 °C |